The resonant tunneling transistor concept arises due to the development in the semiconductors. Day by day the size of the semiconductor has reduced and the reduced size of semiconductor has forced for the invention of the resonant tunneling transistor. Currently a lot research is being conducted on the resonant tunneling transistor and here in this article we will have a brief elaboration about the various features of the resonant tunneling transistor.
In case of the resonant tunneling transistor the current-voltage curve comes to picture and the curve has a greater significance when it comes to the resonant tunneling transistor. With every coming days there has been a great demand for faster and smaller semiconductor and this has led to the invention of the various resonant tunneling transistor.
Over the years there has been a great development in the technology and with the every coming days we are witnessing some wonderful technology. We are also witnessing days day by day improved smart phone, PC, tablet and other electronic devices are coming to market and we are making the most use of it. But we have never thought that how these developments are going on within a short span of time. Behind all these developments there is a tunneling transistor and the transistors are performing all the sophisticated function. In fact, in order to make the transistor even sharp and useful a lot of study and research is also going on.
Transistors are nothing but the chip and hence all chip makers are making an extensive study that how can be a smart chip developed so that it will be to deliver all sort of functions and in the coming days they will come out with some good ideas to have a wonderful tunneling transistor. Nano technology is the other aspect which every chip makers are thinking about it and they are making sure the next generation tunneling transistor are coming with the advanced feature of nanotechnology.
Resonant Tunneling Transistor
The use of the resonant tunneling transistor is very vast and its importance is also growing day by day. Among all the uses the most and typical use of the resonant tunneling transistor comes in the laser diodes, modulators, detectors, and light emitting diodes (LED) as well. In addition to that the resonant tunneling transistor has also got other uses in our daily life.
Study Reports on the Resonant Tunneling Transistor
A lot of research has been made by various scholars on the properties of the resonant tunneling transistor and they have come with various reports. After the test some of the scholar has reported that AlGaAs/GaAs material system is the character associated with resonant tunneling transistor. Coefficient and the peak-to-valley current ratio of the negative-differential resistance (NDR) in a concerned geometry is the other aspect which every scholar must study and this aspect need to be taken care of.
We have already elaborated about the curve feature associated with the resonant tunneling resistor and to be more clear the theoretical peak-to-valley current ratios (PVCR) in the current versus voltage curves always remain on a higher side compared to the normal one. Now you might be thinking about the reason that why the curve remains in the upper side. And here is the cause that the mechanism for tunneling might be sequential and that is why the curve remains on the higher side.
Now come the aspect of build up time and when can we observe and identify the buildup time. For this purpose Jonson and Grincwajg has came together and they proposed a formula using the Breit and Wigner formula. And finally they have came to the conclusion that the resonant tunneling is only observable when the build-up time is smaller than the inelastic scattering time and since then we have been following the same principle for all application related to the resonant tunneling resistor. Yes this study report has made it clear that elastically scattering on incoherent and coherent tunneling is well applicable in case of the resonant tunneling resistor. When it come to the construction of the resonant tunneling resistor all effort has been made to make sure that the resistor will be able to control the depletion region and reduces the dimension in the active channel area.
Tunnel Field Effect Transistor
In the last few years there has been a growing demand for the Tunnel field effect transistor and scholars are doing extensive research on the Tunneling field effect transistor. Definitely there must be an element with the Tunneling field effect transistor due to which it has attracted huge attention of everyone. And here we will just do that. We will elaborate the various specification, use and awe inspiring features of the Tunneling field effect transistor.
Low sub threshold swing and low off stage leak current is the feature you will notice only with the Tunneling field effect transistor and this feature has made the transistor so special. In addition to that you will notice another important feature with the turning field effect transistor is the controlled current mechanism. In general practice the current used to be controlled and monitored by the channeling mechanism on the source side but in case of this transistor you will notice that there will be more immune to short channel effects.
From all prospective it seems that the tunneling field effect transistor is a handy one, however after extensive research and study it has came to the noticed that there exists a drawback to the transistor and it is the low ON state current. The only reason behind the drawback is the poor band to band tunneling efficiency. However effort has been going on to remove this drawback and to make this transistor as a foolproof one. By using the concept of hetero structures, low band gap materials, high k gate and strain concept all effort are being carried out to remove the deficiency. In fact it can also be concluded that the rate and the voluminous which has been going on to remove the deficiency will come with flying color.
In addition to the above the tunneling effect field transistor has also got another minor drawback like aggressively scaled devices and random variability in transistor performance. Finally,it has come to the notice that the root cause behind the drawback is the continuous dopant fluctuation and this fluctuation leads to the drawback.
After having an extensive research and study on the Tunneling field effect transistor it can be concluded that the source channel tunneling process in doping less TFET can be controlled by a gate voltage and the same concept is also implemented in case of other transistors also. Last but not the least the tunneling field effect transistor is absolutely immune to random dopant fluctuations and it has been an important feature for this transistor. The add on point of the tunneling field effect transistor is that it does not require very high thermal budgets and it can manage the thermal budget at a very minimal one. From the present features of the Tunneling field effect transistor it can be sensed and guessed that in future3 a lot work and development can be expected from this resistor.
Farmer Friendly Solar Based Electric Fence for Detecting Cattles
Solar photovoltaic power is stored in a battery through a charge controller. Battery powers a MOSFET based Inverter that develops 50 Hz 220V AC is then fed to a fence, the fence around the farmer field to induce mild shock to encroaching cattle for protecting the crop from damage.
The solar energy is converted to electrical energy by photo-voltaic(PV) cells. This energy is stored in batteries during the daytime in order to be utilized whenever required. This project is designed to use solar energy for the protection of farmer field by applying it to the fence through an inverter.
A solar inverter, or PV inverter, converts the direct current (DC) output of a photovoltaic solar panel into a utility frequency alternating current (AC), which can be fed into a commercial electrical grid or used by a local, off-line electrical network.
In this project solar energy is stored in the battery from Photo Voltaic cells. This stored energy of the battery is converted to AC supply in off-line mode at 50Hz frequency using PWM inverter built around an IC with MOSFET gate driver IC to drive a half MOSFET bridge and step-up transformer
This is all about tunneling transistor and its working.We hope that you have got a better understanding of this concept.Furthermore, any doubts regarding this topic please give your valuable suggestions by commenting in the comment section below.Here is a question for you, what are the applications of tunneling transistor?